Silicon Chip Having Through Via and Method for Making the Same

ABSTRACT

The present invention relates to a silicon chip including a silicon substrate, a passivation layer, at least one electrical device and at least one through via. The passivation layer is disposed on a first surface of the silicon substrate. The electrical device is disposed in the silicon substrate, and exposed to a second surface of the silicon substrate. The through via includes a barrier layer and a conductor, and penetrates the silicon substrate and the passivation layer. A first end of the through via is exposed to the surface of the passivation layer, and a second end of the through via connects the electrical device. When a redistribution layer is formed on the surface of the passivation layer, the redistribution layer will not contact the silicon substrate, thus avoiding a short circuit.

CROSS REFERENCE TO RELATED APPLICATIONS

This application is a division of U.S. patent application Ser. No. 12/647,856, filed Dec. 28, 2009, and also claims priority to Taiwan Application No. 098108312, filed Mar. 13, 2009, which is hereby incorporated by reference herein.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to a silicon chip and a method for making the same, and more particularly to a silicon chip having a through via and a method for making the same.

2. Description of the Related Art

FIG. 1 shows a cross-sectional view of a conventional silicon chip having a through via, and FIG. 2 is a partial enlarged view of FIG. 1. The conventional silicon chip 1 having a through via has a silicon substrate 11, at least one electrical device 12, at least one through via 13, a passivation layer 14 and a redistribution layer 15. The silicon substrate 11 has a first surface 111, a second surface 112 and at least one through hole 113. The electrical device 12 is disposed in the silicon substrate 11, and exposed to the second surface 112 of the silicon substrate 11. The through via 13 penetrates the silicon substrate 11. The through via 13 comprises a barrier layer 133 and a conductor 134. The barrier layer 133 is disposed on the side wall of the through hole 113, and the conductor 134 is disposed in the barrier layer 133. The through via 13 has a first end 131 and a second end 132. The first end 131 is exposed to the first surface 111 of the silicon substrate 11, and the second end 132 connects the electrical device 12. The passivation layer 14 is disposed on the first surface 111 of the silicon substrate 11, and the passivation layer 14 has a surface 141 and at least one opening 142. The opening 142 exposes the first end 131 of the through via 13. The redistribution layer 15 is disposed on the surface 141 and the opening 142 of the passivation layer 14, and the redistribution layer 15 has at least one electrically connecting area 151, and the electrically connecting area 151 connects the first end 131 of the through via 13,

The conventional silicon chip 1 having a through via has the following disadvantages. The diameter D₁ of the opening 142 of the passivation layer 14 must be smaller than the diameter D₂ of the through hole 113 of the silicon substrate 11, or the electrically connecting area 151 of the redistribution layer 15 will directly contact the silicon substrate 11, which will lead to a short circuit. However, the passivation layer 14 is generally patterned by an exposing and developing process, and the resolution of the process is low, so accurate and precise patterns cannot be manufactured. Therefore, the diameter D₁ of the opening 142 of the passivation layer 14 is likely to be greater than the diameter D₂ of the through hole 113 of the silicon substrate 11, and the electrically connecting area 151 of the redistribution layer 15 will directly contact the silicon substrate 11, which will lead to a short circuit. On the other hand, if the passivation layer 14 is patterned by a high resolution process, more subsequent processes are needed, so the method will become complex and costly.

Therefore, it is necessary to provide a silicon chip having a through via and a method for making the same to solve the above problems.

SUMMARY OF THE INVENTION

The present invention is directed to a silicon chip having a through via, The silicon chip comprises a silicon substrate, a passivation layer, at least one electrical device and at least one through via. The silicon substrate has a first surface and a second surface, The passivation layer is disposed on the first surface of the silicon substrate, and the passivation layer has a surface. The electrical device is disposed in the silicon substrate, and exposed to the second surface of the silicon substrate. The through via penetrates the silicon substrate and the passivation layer. The through via comprises a barrier layer and a conductor. The through via has a first end and a second end. The first end is exposed to the surface of the passivation layer, and the second end connects the electrical device.

The present invention is further directed to a method for making a silicon chip having a through via. The method comprises the following steps: (a) providing a silicon chip, wherein the silicon chip comprises a silicon substrate, at least one electrical device and at least one through via, the silicon substrate has a first surface and a second surface, the electrical device is disposed in the silicon substrate and exposed to the second surface of the silicon substrate, the through via is formed in the silicon substrate, the through via comprises a barrier layer and a conductor, and the through via has a first end and a second end, and the second end connects the electrical device; (b) removing part of the silicon substrate from the first surface of the silicon substrate so as to expose the first end of the through via; (c) forming a passivation layer so as to cover the exposed first end of the through via, wherein the passivation layer has a surface; and (d) removing part of the passivation layer, so that the first end of the through via is exposed to the surface of the passivation layer.

In the present invention, since the first end of the through via is exposed to the surface of the passivation layer, when a redistribution layer is formed on the surface of the passivation layer, the redistribution layer will not contact the silicon substrate, thus avoiding a short circuit. Therefore, a lower resolution process can be used, which results in low manufacturing cost and simple manufacturing process.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a cross-sectional view of a conventional silicon chip having a through via;

FIG. 2 is a partial enlarged view of FIG. 1;

FIGS. 3 to 7 are schematic views of a method for making a silicon chip having a through via according to the present invention; and

FIG. 8 is a partial enlarged view of FIG. 7.

DETAILED DESCRIPTION OF THE INVENTION

FIGS. 3 to 7 show schematic views of a method for making a silicon chip having a through via according to the present invention. In FIG, 3, a silicon chip 2A is provided. The silicon chip 2A comprises a silicon substrate 21, at least one electrical device 22 and at least one through via 23. The silicon substrate 21 has a first surface 211 and a second surface 212. In the embodiment, the silicon substrate 21 further has a first through hole 213. The electrical device 22 is disposed in the silicon substrate 21, and exposed to the second surface 212 of the silicon substrate 21. The electrical device 22 is a complementary metal-oxide-semiconductor (CMOS), The through via 23 is formed in the silicon substrate 21. The through via 23 comprises a barrier layer 233 and a conductor 234, and has a first end 231 and a second end 232. The second end 232 connects the electrical device 22. The through via 23 does not penetrate the silicon substrate 21, that is, the first end 231 of the through via 23 is not exposed to the first surface 211 of the silicon substrate 21. The barrier layer 233 is disposed on the side wall of the first through hole 213, the conductor 234 is disposed in the barrier layer 233, and the conductor 234 of the through via 23 is made of copper.

In FIG. 4, part of the silicon substrate 21 is removed from the first surface 211 of the silicon substrate 21 so as to protrude the first end 231 of the through via 23, wherein the top surface of the barrier layer 233 is substantially coplanar with the top surface of the conductor 234. In the embodiment, part of the silicon substrate 21 is removed from the first surface 211 of the silicon substrate 21 by etching, grinding or chemical-mechanical polishing (CMP). In FIG. 5, a passivation layer 24 is formed so as to cover the protruded first end 231 of the through via 23, and the passivation layer 24 has a surface 241, In the embodiment, the passivation layer 24 is a polymer having low dielectric constant, for example, polyimide (PI) or benzocyclobutance (BCB). The dielectric constant of the passivation layer 24 is preferably less than 4.

In FIG. 6, part of the passivation layer 24 is removed, so that the first end 231 of the through via 23 is exposed to the surface 241 of the passivation layer 24. In the embodiment, part of the passivation layer 24 is removed by etching or grinding. The silicon substrate 21 has the first through hole 213, the passivation layer 24 has a second through hole 242. The first through hole 213 and the second through hole 242 have the same diameter, and connect and align with each other, and the through via 23 is formed in the first through hole 213 and the second through hole 242.

In FIG. 7, in the embodiment, a redistribution layer (RDL) 25 is further formed on the surface 241 of the passivation layer 24, and a silicon chip 2B having a through via according to the present invention is formed. The redistribution layer 25 has at least one electrically connecting area 251, and the electrically connecting area 251 connects the first end 231 of the through via 23. Preferably, the electrically connecting area 251 of the redistribution layer 25 is larger than or completely covers a cross-sectional area of the first end 231 of the through via 23.

FIG. 7 shows a cross-sectional view of a silicon chip having a through via according to the present invention, and FIG. 8 is a partial enlarged view of FIG. 7. The silicon chip 2B having a through via comprises a silicon substrate 21, a passivation layer 24, at least one electrical device 22 and at least one through via 23. In the embodiment, the silicon chip 2B having a through via further comprises a redistribution layer (RIM) 25.

The silicon substrate 21 has a first surface 211 and a second surface 212. The passivation layer 24 is disposed on the first surface 211 of the silicon substrate 21, and the passivation layer 24 has a surface 241. In the embodiment, the passivation layer 24 is a polymer having low dielectric constant, for example, polyimide (PI) or benzocyclobutance (BCB). The dielectric constant of the passivation layer 24 is preferably less than 4. The electrical device 22 is disposed in the silicon substrate 21, and exposed to the second surface 212 of the silicon substrate 21. In the embodiment, the electrical device 22 is a complementary metal-oxide-semiconductor (CMOS).

The through via 23 penetrates the silicon substrate 21 and the passivation layer 24. The through via 23 comprises a barrier layer 233 and a conductor 234, and the through via 23 has a first end 231 and a second end 232. The first end 231 is exposed to the surface 241 of the passivation layer 24, and the second end 232 connects the electrical device 22. In the embodiment, the conductor 234 of the through via 23 is made of copper. The silicon substrate 21 has a first through hole 213, and the passivation layer 24 has a second through hole 242. The first through hole 213 and the second through hole 242 have the same diameter, and connect and align with each other. The through via 23 is formed in the first through hole 213 and the second through hole 242, the barrier layer 233 is disposed on the side wall of the first through hole 213 and the second through hole 242, and the conductor 234 is disposed in the barrier layer 233.

In the embodiment, the redistribution layer 25 is disposed on the surface 241 of the passivation layer 24, and the redistribution layer 25 has at least one electrically connecting area 251, and the electrically connecting area 251 connects the first end 231 of the through via 23. Preferably, the electrically connecting area 251 of the redistribution layer 25 is larger than or completely covers a cross-sectional area of the first end 231 of the through via 23,

In the silicon chip 2B having a through via, since the first end 231 of the through via 23 is exposed to the surface 241 of the passivation layer 24, when the diameter D₃ of the electrically connecting area 251 of the redistribution layer 25 is greater than the diameter D₄ of the first end 231 of the through via 23, the electrically connecting area 251 of the redistribution layer 25 only contacts the passivation layer 24, and will not contact the silicon substrate 21, thus avoiding a short circuit. Therefore, a lower resolution process can be used, which results in low manufacturing cost and simple manufacturing process.

While several embodiments of the present invention have been illustrated and described, various modifications and improvements can be made by those skilled in the art. The embodiments of the present invention are therefore described in an illustrative but not restrictive sense. It is intended that the present invention should not be limited to the particular forms as illustrated, and that all modifications which maintain the spirit and scope of the present invention are within the scope defined in the appended claims. 

1. A silicon chip having a through via, comprising: a silicon substrate, having a first surface and a second surface; a passivation layer, disposed on the first surface of the silicon substrate, wherein the passivation layer has a surface; at least one electrical device, disposed in the silicon substrate, and exposed to the second surface of the silicon substrate; and at least one through via, penetrating the silicon substrate and the passivation layer, wherein the through via comprises a barrier layer and a conductor and has a first end and a second end, the first end is exposed to the surface of the passivation layer, and the second end connects the electrical device.
 2. The silicon chip as claimed in claim 1, wherein the passivation layer is a material having low dielectric constant, and the dielectric constant of the material is less than
 4. 3. The silicon chip as claimed in claim 1, wherein the material of the passivation layer is polyimide (P1) or benzocyclobutance (BCB).
 4. The silicon chip as claimed in claim 1, wherein the electrical device is a complementary metal-oxide-semiconductor (CMOS),
 5. The silicon chip as claimed in claim 1, wherein the conductor of the through via is made of copper.
 6. The silicon chip as claimed in claim 1, wherein the silicon substrate has a first through hole, the passivation layer has a second through hole, the first through hole and the second through hole have the same diameter, and the through via is formed in the first through hole and the second through hole.
 7. The silicon chip as claimed in claim 6, wherein the first through hole and the second through hole connect and align with each other.
 8. The silicon chip as claimed in claim 1, further comprising a redistribution layer (RDL) disposed on the surface of the passivation layer, wherein the redistribution layer has at least one electrically connecting area, and the electrically connecting area connects the first end of the through via.
 9. The silicon chip as claimed in claim 8, wherein the electrically connecting area of the redistribution layer is larger than a cross-sectional area of the first end of the through via.
 10. The silicon chip as claimed in claim 8, wherein the electrically connecting area of the redistribution layer completely covers the first end of the through via.
 11. A silicon chip having a through via, comprising: a silicon substrate, having a first surface and a second surface; a passivation layer, disposed on the first surface of the silicon substrate, wherein the passivation layer has a substantially planar top surface; at least one electrical device, disposed in the silicon substrate, and exposed to the second surface of the silicon substrate: and at least one through via, penetrating the silicon substrate and the passivation layer, wherein the through via comprises a barrier layer and a conductor and has a first end and a second end, the first end is coplanar with the top surface of the passivitation layer, and the second end connects the electrical device.
 12. The silicon chip as claimed in claim 11, wherein the passivation layer is a material having low dielectric constant, and the dielectric constant of the material is less than
 4. 13. silicon chip as claimed in claim 11, wherein the material of the passivation layer is polyimide (_(P1)) or benzocyclobutance (BCB), the electrical device is a complementary metal-oxide-semiconductor (CMOS), and the conductor of the through via is made of copper.
 14. silicon chip as claimed in claim 11, wherein the silicon substrate has a first through hole, the passivation layer has a second through hole, the first through hole and the second through hole have the same diameter, and the through via is formed in the first through hole and the second through hole, the first through hole and the second through hole connect and align with each other.
 15. The silicon chip as claimed in claim 11, further comprising a redistribution layer (RDL) disposed on the surface of the passivation layer, wherein the redistribution layer has at least one electrically connecting area, and the electrically connecting area connects the first end of the through via.
 16. A silicon chip having a through via, comprising: a silicon substrate, having a first surface and a second surface; a passivation layer, disposed on the first surface of the silicon substrate, wherein the passivation layer has a surface; at least one through via, penetrating the silicon substrate and the passivation layer, wherein the through via comprises a barrier layer and a conductor and has a first end and a second end, the first end is exposed to the surface of the passivation layer; and a redistribution layer (RDL) disposed on the surface of the passivation layer and connecting the first end of the through via, wherein the bottom surface of the redistribution layer (RDL) is substantially planar.
 17. The silicon chip as claimed in claim 16, wherein the passivation layer is a material having low dielectric constant, and the dielectric constant of the material is less than
 4. 18. The silicon chip as claimed in claim 16, wherein the material of the passivation layer is polyimide (PI) or benzocyclobutance (BCB), the electrical device is a complementary metal-oxide-semiconductor (CMOS), and the conductor of the through via is made of copper.
 19. The silicon chip as claimed in claim 16, wherein the redistribution layer has at least one electrically connecting area, the electrically connecting area connects the first end of the through via, and the electrically connecting area of the redistribution layer is larger than a cross-sectional area of the first end of the through via.
 20. The silicon chip as claimed in claim 16, wherein the redistribution layer has at least one electrically connecting area, the electrically connecting area connects the first end of the through via, and the electrically connecting area of the redistribution layer completely covers the first end of the through via. 